PART |
Description |
Maker |
2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp. BOCA[Boca Semiconductor Corporation]
|
FZT692B |
NPN Silcon Planar Medium Power High Gain Transistor
|
Guangdong Kexin Industrial Co.,Ltd
|
BDT41 |
Silicon Epitaxial Base Power Transistors
|
ETC
|
BR24C16AN-10SU-1.8 BR24C01A-10SU-1.811 BR24C16A-10 |
Silcon Monolithic Integrated Circuit
|
Rohm http://
|
FJPF9020 FJPF9020TU |
Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Darlington Transistor NPN Epitaxial Darlington Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
2N3789-12 |
EPITAXIAL-BASE TRANSISTORS
|
Comset Semiconductor
|
2SC4246 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Oscillator Applications (common base) TV Tuner, UHF Converter Applications (common base)
|
TOSHIBA
|
MJ3000 |
60V silicon epitaxial-base darlington
|
Comset Semiconductors
|
BD201 BD202 BD204 BD203 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
|
GE Security, Inc. GE[General Semiconductor]
|
HI667A HI649A |
Emitter to base voltage:5V 1A PNP epitaxial planar transistor
|
Hi-Sincerity Microelectronics
|